FORMATION AND CHARACTERIZATION OF COBALT SILICIDES ON SILICON WAFER (111) AT DIFFERENT SUBSTRATE AND ANNEALING TEMPERATURES

Presenter	:	NOORHISYAM ABDUL HAMID
E-mail	:	-
Date	:	3 / 1 / 2006
Time	:	3.00 PM
Venue	:	CONFERENCE ROOM, SCHOOL OF PHYSICS
Sypnosis	:	Metal silicides are extensively used in very large scale integrated circuit device processing as interconnects, Schotky barriers, ohmic contacts and low resistivity gates. Growth of cobalt silicides (CoSi2) on silicon (111) has been demonstrated by evaporating pure cobalt on silicon using vacuum evaporator. Two different approaches were carried out to produce CoSi2; Co evaporated on silicon at room temperature for the first approach and the second approach involved Co evaporated at substrate temperature ranging from 1000C to 3000C. All the samples were then annealed at different temperatures ranging from 6000C to 8500C for 30 minutes in argon. Thickness measurements before annealing were done on all the samples using Filmetrics. Apart from that, characterizations of the samples were also done using several equipments, which includes the standard four-point probe, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffractions. From the research done, the best result came from annealing temperature of 800°C with substrate temperature of 300°C. This showed that Co evaporated at high substrate temperature forms smaller and smoother grains of CoSi2. Also, the heating process reduced the oxygen level compared to those evaporated on substrate at room temperature.