THE EFFECTS OF FABRICATION PROCESSES ON MONOCRYSTALLINE SILICON SOLAR CELL

Presenter	:	MOTAHHER ABDALLAH HASSAN QA’EED
E-mail	:	-
Date	:	19 / 6 / 2009
Time	:	3.00 PM
Venue	:	MAKMAL FIZIK GUNAAN (249), ARAS 2, PUSAT PENGAJIAN SAINS FIZIK
Sypnosis	:	The Sun is the largest potential source of energy available for the human being. The Earth receives from the sun 1.7·1017 W of energy, from which about 40% is reflected back to the space. Despite the absorption of part of the radiation in the atmosphere, the amount of energy received in one hour would still be enough to cover the energy requirements of the whole world for one year. There are several classes of systems that try to take profit of this energy. The Federal Energy Administration of USA separates the solar energy into six classes of systems: solar heating and cooling of buildings, solar thermal electric power, photovoltaic power, wind conversion, bioconversion and ocean thermal-gradient power. The economical viability of all these systems depends on the investment made in their development, as well on the price of fossil fuels, which up to now constitute the cheapest way to produce energy. However, this study aims were devoted to test and discuss the processes fabrication of solar cell, which divided into two types of results; The first result has studied the solid source diffusion where started of created of p-n junction curve, the textured has presented to get the actual current and deference doping have shown the optimized of diffusion temperature, time and gas follow. The second result has showed the study of the effect fabrication processes of solar cell using monocrystalline silicon which has compared between two different texturing on the surface of wafer. After that, the annealing, thinning wafer, edge shunt solution, intensity of light, antireflection coating and effect of metallization during the fabrication silicon solar cell have been discussed. However, the processes have started fabrication solar cell on p-type silicon (111) with which have been discussed in detail in next sections.

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