COMPARISON OF FRONT AND BACK JUNCTION MONOCRYATALINE SILICON SOLAR CELL
Presenter | : | IBRAHIM MUHAMMAD BAGUDO |
: | - | |
Date | : | 21 / 5 / 2008 |
Time | : | 3.00 PM |
Venue | : | CEMACS CONFERENCE ROOM, SCHOOL OF PHYSICS |
Sypnosis | : | As a part of our effort on cost reduction strategy, a simple technologies of rapid thermal processing (RTP) and conventional furnace processing (CFP) has been combine, to optimize emitter formation on both front and back junction solar cells. We are developing a back junction cell whose design is compatible with a wider range of silicon material qualities. For back junction solar cell more specifically, its efficiency strongly depends on material quality, the ratio of device thickness to minority carrier diffusion length and highly passivated surfaces. We fabricate a 25cm2 of 100 µm thick back junction solar cell, it demonstrate efficiency of 20% while the front junction shows 19.5% on p-type<111> of 275 µm thickness, with resistivity of ( 0.75-1.25) cm respectively. Key words: back contact, minoritycarrier diffusionlength, monocrytaline silicon solar cell |
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