STUDY OF THE EFFECT OF NI/SI INTERFACE ON THE PROPERTIES OF SILICON DEVICE AS A PHOTODETECTOR

Presenter	:	MOHD. ZAKI MOHD. YUSOFF
E-mail	:	-
Date	:	26 / 10 / 2007
Time	:	3.00 PM
Venue	:	BILIK PERSIDANGAN SEMENTARA (CEMACS), ARAS 1, PUSAT PENGAJIAN SAINS FIZIK
Sypnosis	:	This project studied about the effect of Ni/Si structural interface for the properties of silicon device as a photodetector. This research are consists of two main parts. The first part is study about the effects of different cleaning treatment that is Radio Corporation of America (RCA), Sulfuric Peroxide Mixture (SPM) and Hydrofluoric (HF) for Ni/Si structural interface. The AFM measurement was used for each samples and it was found that sample with the SPM treatment produced the lower value of the surface roughness compared with the others treatment. All of the samples were then fabricated to make the metal-semiconductor-metal (MSM) photodetector. The devices that received the RCA treatment showed the lower value of dark current compared with the other device. It was believed that the oxide layer was reducing the dark current device. The SILVACO ATLAS simulation software showed that the higher value of surface roughness possessed the higher value of surface recombination velocity (SRV) to produce the lower dark current. The second part of this project is to study about the combination effect of cleaning and cryogenic temperature treatment on Ni/Si interface. The AFM measurement showed that it was successfully found the samples with the combination between cleaning and temperature treatment reduced the value of surface roughness of the samples. All of the samples were then fabricated to make the MSM photodetector. The I-V measurement showed the dark current and photo current for the sample with the combination treatment were lower compared with the sample without the combination treatment. The Raman, PL, FTIR and XRD measurements showed that the optical properties change to the cleaned and temperature treated samples. Samples with the RCA cleaning and different time cryogenic temperature treatment were also fabricated to make the MSM photodetector and it was found that the 30 minutes of time treatment produced the lower dark current and the photo current compared with the other time treatment. It can be explained by the fact that the uniformity of oxide layer was reduced the number of electron carrier that throughout the Ni/Si interfaces layer.

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